Hello, thank you very much for the explanation!! I did nanoidentation on a CAR photoresist with 3 different layer thicknesses (4.5um, 5.2um and 6.5um) with a penetration depth of 500nn : I examined 6 samples : For each layer thickness 2 samples : the photoresist had only softback for the first simple, then for the second sample the photoresist got SB + PEB + HB, the penetration depth was 500nm for all. i'v come to the conclusion that when the thickness of the photo resist is bigger, then the foto resist is harder. Do you have an idea why?? Thank you very much!!!
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Hello, thank you very much for the explanation!!
I did nanoidentation on a CAR photoresist with 3 different layer thicknesses (4.5um, 5.2um and 6.5um) with a penetration depth of 500nn : I examined 6 samples :
For each layer thickness 2 samples : the photoresist had only softback for the first simple, then for the second sample the photoresist got SB + PEB + HB, the penetration depth was 500nm for all.
i'v come to the conclusion that when the thickness of the photo resist is bigger, then the foto resist is harder. Do you have an idea why?? Thank you very much!!!