They just made the laser power to be strong enough. They achieved it by shooting 2 laser pulses onto the same Sn droplet: the first shot flattens the droplet and the second shot generated EUV.
I'd like to say thank you Professor Christ Mack. I've been watching these lectures from 38 to this. you made me feel like I got most of information in terms of lithography process and lots of confidence as well. while watching this lecture, I wondered one thing. That is between Quadruple Patterning in DUV and EUV, which way is more commonly used in reality these days(2018). when it comes to Quadruple Patterning, it costs a lot, and EUV is required high technology. So I'm curious about it. Thanks for reply in advance :)
And one plus, could you give me an answer about how many percent of transmission is going to be reached in wafer in 2018? (It came from 1~2% of it just reached in 2013)
Great lectures, the best. Could you please provide some references re slide 9, "Brightness - we still need a factor of 10-100X increase in brightness". Thanks in advance.
These slides are 4 years old. In 2017, most EUV tools in the field are running with an 80 W source. Many people believe that high volume manufacturing can begin with a 250 W source, but I believe that high volume, high yield manufacturing will require 500 - 1000 W for contact/via/cut mask layers. Thus, today, we are 3X - 10X too low in source brightness, depending on your assumptions.
What about x-ray lithography, whouldn't that be even better than EUV lithography seeing that x-rays have even shorter wavelengths than extreme ultraviolet?
Brandon Fisher X-ray lithography, with a wavelength on the order of 1 nm, was attempted in the late 1980s and early 1990s. Unfortunately, it is not possible to build a lens or mirror that can focus light at this small wavelength. Thus, only proximity printing is possible. This poses a number of difficulties due to process control when making 1X masks, besides the difficulty of building a bright light source. The industry's 1X x-ray lithography efforts were abandoned in the early 1990s.
Chris Mack I get it so EUV light just happens to be at the right wavelength for this to possibly work; not too long, not too short but just right, I didn't know they already tried x-ray lithography before.
This helped me with my interview at ASML, thx!
haha exactly why i'm here!
Going to the interview with ASML on monday, wish me luck !
Wow! Me too lol.
Same! Lol.
Also why I am here! hope the others made it! if not ASML somewhere else ^_^
would be nice if you gave a similar presentation wrt current technology
PDF copies of all the slides in this course are available at:
www.lithoguru.com/scientist/CHE323/course.html
This really helped prep for interviews. Well explained
Seems like Asml made it, i wonder how they overcame the source issue. Great lecture Prof. Thank you so much
They just made the laser power to be strong enough. They achieved it by shooting 2 laser pulses onto the same Sn droplet: the first shot flattens the droplet and the second shot generated EUV.
@@dr.phosphates-7220 it was Cymer that did it really. ASML just acquired them.
Really good lecture. Explanation is very clear.
Very well explained. I wonder what the current state is now in 2016. Just read that TSMC is planning to start mass production in 2020.
Great video. well-presented and helpful!
Thank you!!
This is great info. Please update.
i kinda love this guy
A very nice lecture... thanks a lot...
excelente, thanks
I'd like to say thank you Professor Christ Mack. I've been watching these lectures from 38 to this. you made me feel like I got most of information in terms of lithography process and lots of confidence as well. while watching this lecture, I wondered one thing. That is between Quadruple Patterning in DUV and EUV, which way is more commonly used in reality these days(2018). when it comes to Quadruple Patterning, it costs a lot, and EUV is required high technology. So I'm curious about it. Thanks for reply in advance :)
And one plus, could you give me an answer about how many percent of transmission is going to be reached in wafer in 2018? (It came from 1~2% of it just reached in 2013)
As of today, EUV is not ready. So multiple patterning the 193 immersion is the only game in town.
Thank you for your wonderful EUV lecture! However, I have a question about Intermediate focus. I wonder what the role of intermediate focus is.
My vague understanding: point at which light source hits max power
Brilliant lecture! Thank You! Do you have in mind to upload sg about Bonding as well?
my question is why we need so many reflection during making the mavchine it is about 6 glass for reflecting before reaching wafer stage ?
Multiple mirrors are required to reduce the aberrations in the image formation.
@@ChrisMack thanks alot
15:12 I'm sure you heard the joke already, but all this plasma smells like teen spirit !
Wow that's so complex.... I'll stay with 0.35µm technology ;-)
Great lectures, the best. Could you please provide some references re slide 9, "Brightness - we still need a factor of 10-100X increase in brightness". Thanks in advance.
These slides are 4 years old. In 2017, most EUV tools in the field are running with an 80 W source. Many people believe that high volume manufacturing can begin with a 250 W source, but I believe that high volume, high yield manufacturing will require 500 - 1000 W for contact/via/cut mask layers. Thus, today, we are 3X - 10X too low in source brightness, depending on your assumptions.
We're making progress everyday here at Cymer ASML San Diego!
@@randyvfromtheperch indeed you were! Congratulations on getting there and making it practical for real world use :)
Now Chinese can listen into this info and build their own machines ..... 😊 Ah .... this video is 10 yrs ago
What about x-ray lithography, whouldn't that be even better than EUV lithography seeing that x-rays have even shorter wavelengths than extreme ultraviolet?
Brandon Fisher X-ray lithography, with a wavelength on the order of 1 nm, was attempted in the late 1980s and early 1990s. Unfortunately, it is not possible to build a lens or mirror that can focus light at this small wavelength. Thus, only proximity printing is possible. This poses a number of difficulties due to process control when making 1X masks, besides the difficulty of building a bright light source. The industry's 1X x-ray lithography efforts were abandoned in the early 1990s.
Chris Mack I get it so EUV light just happens to be at the right wavelength for this to possibly work; not too long, not too short but just right, I didn't know they already tried x-ray lithography before.
@@ChrisMack I always thought that x-ray wasn't used because it is an ionising radiation finally damaging the silicon bounds
@@thcoura Yes, hard x-rays can damage devices. But the main reason x-rays aren't used for lithography is the lack of lenses - we can't focus them.