I wonder if the annealing in high vacuum will improve the SiC/SiO2 interface: - during the gate oxidation growing, CO is formed, which is gas from, which may be trapped in the Crystal, and significantly impact the interface/gate property. - annulling does help to repair the crystal structure, but not much on release the trapped CO from the crystal. - or grow gate at low rate in multiple steps, insert vacuum annealing after every SiO2 grow.
SiC ICs are about to become incredibly important. SiC gates are capable of switching well in excess of 600C (standard silicon ICC breaks down around 250C), which would be absolutely perfect for both surface and atmospheric rovers/drones on Venus.
Great, easy to understand!
I wonder if the annealing in high vacuum will improve the SiC/SiO2 interface:
- during the gate oxidation growing, CO is formed, which is gas from, which may be trapped in the Crystal, and significantly impact the interface/gate property.
- annulling does help to repair the crystal structure, but not much on release the trapped CO from the crystal.
- or grow gate at low rate in multiple steps, insert vacuum annealing after every SiO2 grow.
Fantastic, thank you for sharing
Great and very informative.
SiC ICs are about to become incredibly important. SiC gates are capable of switching well in excess of 600C (standard silicon ICC breaks down around 250C), which would be absolutely perfect for both surface and atmospheric rovers/drones on Venus.
loved it
This vedio i want to pdf file with an edit option please