SiC MOSFET datasheet and comparison to IGBT

Background material:
Si MOSFET datasheet explained
MOSFET datasheet - Part I
• MOSFET datasheet - Part I
Continuing education lectures: MOSFET datasheet - Part 2
• Continuing education l...

[@damny0utoobe]

For the longest time, I wanted resources on power electronics, books, app notes, tutorials...and then I found your channel. It's everything I could have asked for.

[@sambenyaakov]

Thanks😊

[@robson6285]

This is a great video! So much usefull insights to get from this!

[@sambenyaakov]

Thanks.

[@hamidk4772]

As always, wonderful, useful and very practical information.

[@sambenyaakov]

😊

[@phychemnerd]

Thanks a lot! This will certainly help me make some key design decisions.

[@sambenyaakov]

Thanks for comment

[@stanislavsubrt886]

Thank You for amazing power electronics presentations!!! I know Im saying it over and over again but this is great stuff! You are the best "youtuber" :) Im just afraid and concerned that such an important content is available only on single third party website (YT). Were You considering placing all of these videos for example on your university webpage to have somehow secondary source? I have the feeling like You have written the most intuitive, comprehensive and complex book for power ee, but only single printout can be borrowed from Central World Library Corporation... maybe Im just paranoid.?

[@sambenyaakov]

Hi Stanislav, thank you for your comment and concern. Paraphrasing the old saying I believe "In YouYube we trust". It would take a catastrophic event, like someone in Google turning off the main switch, to erase the accumulated enormous data. So lets enjoy meanwhile.

[@user-tq9zv1dt1k]

Always nice lecture. I really appreciate.

[@sambenyaakov]

Thanks

[@catalin3407]

Thanks for creating ENGLISH content !

[@sambenyaakov]

😊

[@leigu6766]

Dear Professor Sam, at time stamp 35:50, should we use the rising time or switching cycle time to do the sizing of gate driver power supply? If using the rising time, the current request will be as high as 6A, then the power supply power for single switch is 90W(15V), which seems too high. If using switching frequency time, which component provide the rush current then?

[@sambenyaakov]

The required Aux PS current is Qg (total) times switching frequency.

[@deniskramarenko8083]

Thank you for the great lecture, professor.
Why kelvin source technique is not implemented in Si MOSFETs?

[@sambenyaakov]

It is important when di/dt is very fast. Yet, I think that in time we will see Si mosfets with K connection.

[@hhao0011]

Dear Professor, thanks very much for explaining SiC devices in such a practical way.
Could you please also comment on the difference between SiC and Si in terms of ringing? We observe longer and larger ringing with SiC MOSFET and diode than Si. What could be the cause for it ? We think it might be output capacitance of SiC is a lot larger. Please kindly comment on this. Thanks again.

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[@theodoresilas1200]

@Cohen Tadeo instablaster :)

[@cohentadeo3033]

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[@cohentadeo3033]

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[@theodoresilas1200]

@Cohen Tadeo Happy to help :D

[@dongolahmed]

Hello professor, I really appreciate your effort to make such informative lectures.
I also have a question ... what is the effect of low transcoductance of the SiC Mosfets when they are used to drive inductive loads (i.e. motors, inductive heaters, ... etc.)?

[@sambenyaakov]

In switching mode, little effect.

[@petergriffin760]

maybe sic prices are hold artificially, as not to take over existing silicon business?

[@marcoatzeri4138]

raw material (Si Wafer vs SiC Wafer) is currently ~ 20 times more expensive per same area. It will need some years before cost per performance will reach the Silicon IGBT level. Of course with SiC Mosfet you can do some application not feasible with Silicon and that are where the volume are growing.

[@sambenyaakov]

Thanks Marco, good points. Obviously there are plenty of applications that are not cost sensitive so SiC MOSFETs will survive and develop.

[@MasterIvo]

IGBT from 44:30

[@sambenyaakov]

?