S10-E2_Compound Semiconductors webinar series_Part 2-4H-SiC CMOS technologies for harsh environments

In this webinar, dr. Mathias Rommel from Fraunhofer IISB will start with a review of why Silicon Carbide (SiC) technology became so important during the last years in the power semiconductor market, with further increasing growth rates for the next years. Its intrinsic material characteristics not only make SiC devices favorable for many power applications but also allow the operation of SiC devices in harsh environments as we will explain.
Next, we will introduce Fraunhofer IISB’s early access 4H-SiC-CMOS technology, which is available via EUROPRACTICE services. It aims at providing you with an integrated circuit technology for operating temperatures far above what is possible with Si technology, i.e., 500 °C and above.
Further, we will present a detailed description of the process flow including key technical parameters of our technology and fundamental electrical characteristics. In this context, also optionally available process modules will be introduced which might extend the functionality of the realizable circuits beyond “pure CMOS” applications: Among those, we offer additional dedicated or custom-defined ion implantation steps which enable lateral power devices (RESURF implants) or UV photodiodes. Then the current rudimentary Process Design Kit (PDK) for the technology will be discussed: Requirements, functionality, and limitations.
Finally, realized examples by our partners will demonstrate best what can be achieved with Fraunhofer IISB’s 4H-SiC-CMOS with a special focus on sensor applications. A short outlook on future improvements in the technology and its performance will round up the presentation.

[@Gauravkumar-cm3kt]

very nice webinar thanks