I wondered about the 'more energy efficiency' of the boost design...it looks like inductive transient energy can be recycled into the boost circuit, but this was not explicitly explained here... if I'm right, it might be useful to add something about that into this, or another, talk? How important is the SOA of the FET in the active clamp...it seems to be of limited importance, since the device does not spend much time (hopefully ;-) ) in a 'pinch' state that is the worst-case SOA issue?
Hello, thanks for your question and thanks for watching! Regarding the efficiency of the boost circuit, you are correct, the inductive energy recycles into the boost converter. Then regarding the SOA - it depends on the length decay time of the current through the inductor, anything longer than of 100us you do run the risk of thermal runaway as per the spirito effect when operating MOSFETs in linear mode.
Great
I wondered about the 'more energy efficiency' of the boost design...it looks like inductive transient energy can be recycled into the boost circuit, but this was not explicitly explained here... if I'm right, it might be useful to add something about that into this, or another, talk?
How important is the SOA of the FET in the active clamp...it seems to be of limited importance, since the device does not spend much time (hopefully ;-) ) in a 'pinch' state that is the worst-case SOA issue?
Hello, thanks for your question and thanks for watching! Regarding the efficiency of the boost circuit, you are correct, the inductive energy recycles into the boost converter. Then regarding the SOA - it depends on the length decay time of the current through the inductor, anything longer than of 100us you do run the risk of thermal runaway as per the spirito effect when operating MOSFETs in linear mode.