Example 5.2 (Sedra)" || Unveiling the Secrets of MOSFET (NMOS) || (Bangla)

Example 5.2 (Sedra) (Bangla)
Delve into the intricate world of NMOS MOSFET behavior in the saturation region with a focus on Example 5.2 from Sedra's theory. This video decodes the complexities of MOSFET operation, providing insights into its behavior in the saturation region. Join us to uncover the secrets of MOSFET (NMOS) in the saturation region.(English) Example 5.2 (Sedra)
Example 5.2: Consider an NMOS transistor fabricated in a 0.18-μm process with L = 0.18 μm and W = 2 μm. The
process technology is specified to have C ox = 8.6 fF/μm
2 , μn = 450 cm 2 /V · s, and V tn = 0.5 V
a) Find VGS and VDS that result in the MOSFET operating at the edge of saturation with I D = 100 μA.
(b) If VGS is kept constant, find VDS that results in I D = 50 μA.
(c) To investigate the use of the MOSFET as a linear amplifier, let it be operating in saturation with
VDS = 0.3 V. Find the change in i D resulting from vGS changing from 0.7 V by +0.01 V and by
−0.01 V
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