yes , using High-k/Metal Gate (HKMG) Technology: High-k dielectrics and metal gates can be used to replace traditional silicon dioxide gates. High-k materials have a higher dielectric constant, which allows for a thicker gate dielectric without compromising performance, thereby reducing gate leakage. Other techniques are GAA, FinFETs, Fully depleted SOI . Hope it helped. Thanks for watching the video.
Yes, it is possible to use high-k/metal gate (HKMG) technology in Gate-All-Around Field-Effect Transistors (GAAFETs) to reduce leakage current. The integration of high-k dielectrics and metal gates in GAAFETs can significantly enhance their performance by improving gate control and reducing gate leakage. For more you can refer below paper www.researchgate.net/publication/4357573_45nm_High-k_metal_gate_strain-enhanced_transistors
@@azamatbezhan1653 Yes, it is possible to use high-k/metal gate (HKMG) technology in Gate-All-Around Field-Effect Transistors (GAAFETs) to reduce leakage current. The integration of high-k dielectrics and metal gates in GAAFETs can significantly enhance their performance by improving gate control and reducing gate leakage. To know more you can refer : www.researchgate.net/publication/4357573_45nm_High-k_metal_gate_strain-enhanced_transistors
Great to know that you liked this video. I believe it's not a good idea to have a video in reference. But I can share a couple of references (papers & books) which you could give for the reference for GIDL. You can mail me at niranjan.rvceit@gmail.com
Bcz drain leakage current is induced by the gate. Apparently, as vds increases Vdg increases as well..which leads to overcome of gate and drain region beneath the gate. Which leads to leakage current.( As explained in the video) Thereby without taking Vdg into context one can't analyse it. Hope you are able to comprehend.
Thank you, this was very helpful!
My pleasure ! Happy learning 🎆 Thanks for watching
do more videos sir
it would be helpful us 🥰
Thankyou for the explanation 😊 can you suggest any good book for short channel effect please 😢
Hey Sreemukhi kottada
you can find it here -
www0.cs.ucl.ac.uk/staff/ucacdxq/projects/vlsi/report.pdf
Is there any alternative method to replace Bottom silicon insulator technoligy to more enhanced for reduce threshold leakage
yes , using High-k/Metal Gate (HKMG) Technology:
High-k dielectrics and metal gates can be used to replace traditional silicon dioxide gates. High-k materials have a higher dielectric constant, which allows for a thicker gate dielectric without compromising performance, thereby reducing gate leakage.
Other techniques are GAA, FinFETs, Fully depleted SOI .
Hope it helped. Thanks for watching the video.
@@semitech01 is it possible to use high k/metal gate in Gaafet
Yes, it is possible to use high-k/metal gate (HKMG) technology in Gate-All-Around Field-Effect Transistors (GAAFETs) to reduce leakage current. The integration of high-k dielectrics and metal gates in GAAFETs can significantly enhance their performance by improving gate control and reducing gate leakage.
For more you can refer below paper
www.researchgate.net/publication/4357573_45nm_High-k_metal_gate_strain-enhanced_transistors
@@azamatbezhan1653 Yes, it is possible to use high-k/metal gate (HKMG) technology in Gate-All-Around Field-Effect Transistors (GAAFETs) to reduce leakage current. The integration of high-k dielectrics and metal gates in GAAFETs can significantly enhance their performance by improving gate control and reducing gate leakage.
To know more you can refer :
www.researchgate.net/publication/4357573_45nm_High-k_metal_gate_strain-enhanced_transistors
@@semitech01 best answer
Really good explanation. May i know if there is anyway i can make it as my reference in my thesis?
Great to know that you liked this video. I believe it's not a good idea to have a video in reference. But I can share a couple of references (papers & books) which you could give for the reference for GIDL. You can mail me at niranjan.rvceit@gmail.com
Density of knowledge is high
Thank you 😊 stay connected for more electronics videos.
Jab voltage vds apply kr rhe h toh vdg kyo liya ???
Bcz drain leakage current is induced by the gate. Apparently, as vds increases Vdg increases as well..which leads to overcome of gate and drain region beneath the gate. Which leads to leakage current.( As explained in the video)
Thereby without taking Vdg into context one can't analyse it. Hope you are able to comprehend.