Vertical GaN™ - Unlocking the full potential of GaN

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  • čas přidán 13. 05. 2020
  • Dinesh Ramanathan, CEO and co-Founder of NexGen PowerSystems, Inc., and Wolfgang Meier, Senior Director Business Development Manager for NexGen PowerSystems, Inc., tell us about about NexGen's Vertical GaN™ eJFET transistors and their principles of operation.

Komentáře • 3

  • @prasad-no7iv
    @prasad-no7iv Před 4 lety +2

    Good Technology. Once reliability of the product established, many end applications. Cost need to be lower than SiC FETs and 1.X of Si SJ FETs.

    • @user-fm1db6vb7n
      @user-fm1db6vb7n Před 3 lety

      I think the cost will be very high and even high than SiC MOSFET. Because GaN substrate is very expensive.

    • @DigitalAlligator
      @DigitalAlligator Před 2 lety

      @@user-fm1db6vb7n 为什么价格会贵? 结晶太慢?