A 63 74 DBΩ Gain 60 84 GHz Bandwidth Power Efficient Transimpedance Amplifier in 130 Nm SiGe BiCMOS

A 63.74 DBΩ Gain 60.84 GHz Bandwidth Power-Efficient Transimpedance Amplifier in 130 Nm SiGe BiCMOS Technologys
Lavakumar Navilipuri and Andy Heinig, Fraunhofer Institute for Integrated Circuits IIS/EAS, Germany
Abstract
This paper presents the design and analysis of ahigh-performance Transimpedance Amplifier (TIA) tailored forhigh-speed optical communication systems. The TIA utilizes aDarlington pair topology with Negative Resistive Feedback toachieve high transimpedance gain and wide bandwidth. Throughdetailed circuitanalysis and simulation, the TIA exhibits atransimpedance gain of 63.7 dBΩ and a bandwidth of 60.84 GHzafter layout implementation, making it suitable for high-speeddata transmission applications. TheTIA also demonstrates lowinput-referred noise of 16.20 pA/√Hz and consumes only 31.53mW of DC power, highlighting its power efficiency. Comparativeanalysis with existing TIAs showcases the effectiveness of theproposed design, which achieves impressive performance withoutthe need for additional circuitry.This study advances high-speed optical communication systems by presenting a TIA design that effectively balances performance, efficiency, and simplicity.
Keywords
Darlington Pair, Optical receivers, SiGe BiCMOS Technology, Transimpedance Amplifier
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