Video

This video is an absolute game-changer.

How can i know the x²+y²=1 ??

This CZcamsr deserves more subscribers! 👏

may i please know the source of this question?

This video has left me inspired and motivated to chase my dreams. Thank you!

Heyyy can you explain a Pentagonal pyramid,base in the vp and an edge of the base in the hp

I have the same problem I can not find solution The video you sent it it is different than my question Can you solution it

How i can send my question?

Thank you I have one question like this I need you help me please

Wrong hai

bhaii wrong hai

Can you do with undetermined coefficient method please?

AIM: To obtain V-I characteristics of Zener diode Theory: The Zener diode is designed to operate in reverse breakdown region. Zener diode is used for voltage regulation purpose. Zener diodes are designed for specific reverse breakdown voltage called Zener breakdown voltage (VZ). The value of VZ depends on amount of doping. Breakdown current is limited by power dissipation capacity of the zener diode. If power capacity of the Zener is 1 W and Zener voltage is 10V, highest reverse current is 0.1A or 100 mA. If current increases more than this limit, diode will be damaged. Forward characteristics of the Zener diode is similar to normal PN junction diode. Experiment Procedure: 1. Connect the power supply, voltmeter, current meter with the diode as shown in the figure for reverse bias. You can use two multimeter (one to measure current through diode and other to measure voltage across diode) 2. Increase voltage from the power supply from 0V to 20V in step as shown in the observation table 3. Measure voltage across diode and current through diode. Note down readings in the observation table. 4. Reverse DC power supply polarity for forward bias 5. Repeat the above procedure for the different values of supply voltage for reverse bias 6. Draw VI characteristics for reverse bias and forward bias in one graph

AIM: To obtain V-I characteristics of PN junction diode Theory: The semiconductor diode is formed by doping P-type impurity in one side and N-type of impurity in another side of the semiconductor crystal forming a p-n junction as shown in the following figure. At the junction initially free charge carriers from both side recombine forming negatively charged ions in P side of junction(an atom in P-side accept electron and becomes negatively charged ion) and positively charged ion on n side(an atom in n- side accepts hole i.e. donates electron and becomes positively charged ion)region. This region deplete of any type of free charge carrier is called as depletion region. Further recombination of free carrier on both side is prevented because of the depletion voltage generated due to charge carriers kept at distance by depletion (acts as a sort of insulation) layer as shown dotted in the above figure. Working principle: When voltage is not applied across the diode, depletion region forms as shown in the above figure. When the voltage is applied between the two terminals of the diode (anode and cathode) two possibilities arises depending on polarity of DC supply. [1] Forward-Bias Condition: When the +Ve terminal of the battery is connected to P-type material & -Ve terminal to N-type terminal as shown in the circuit diagram, the diode is said to be forward biased. The application of forward bias voltage will force electrons in N-type and holes in P-type material to recombine with the ions near boundary and to flow crossing junction. This reduces width of depletion region. This further will result in increase in majority carriers flow across the junction. further increased in magnitude the depletion region width will continue to decrease, resulting in exponential rise in current as shown in ideal diode characteristic curve. [2]Reverse-biased: If the negative terminal of battery (DC power supply) is connected with P-type terminal of diode and +Ve terminal of battery connected to N type then diode is said to be reverse biased. In this condition the free charge carriers (i.e. electrons in N-type and holes in P-type) will move away from junction widening depletion region width. The minority carriers (i.e. -ve electrons in p-type and +ve holes in n-type) can cross the depletion region resulting in minority carrier current flow called as reverse saturation current(Is). As no of minority carrier is very small so the magnitude of Is is few microamperes. Ideally current in reverse bias is zero. In short, current flows through diode in forward bias and does not flow through diode in reverse bias. Diode can pass current only in one direction. Experiment Procedure: 1. Connect the power supply, voltmeter, current meter with the diode as shown in the figure for forward bias diode. You can use two multimeter (one to measure current through diode and other to measure voltage across diode) 2. Increase voltage from the power supply from 0V to 20V in step as shown in the observation table 3. Measure voltage across diode and current through diode. Note down readings in the observation table. 4. Reverse DC power supply polarity for reverse bias 5. Repeat the above procedure for the different values of supply voltage for reverse bias 6. Draw VI characteristics for forward bias and reverse bias in one graph

Objective: To study the V-I characteristics of an incandescent lamp Theory: The filamens lamps are incandescent lamps, e.g. carbon, tungsten etc. The filament of these lamps, when heated due to electric current, emits radiations visible spectrum. The filament of incandescent lamp is mostly made of tungsten wire whose melting point is 34000°C. At normal working voltage, the filament material gets heated to a very high temperature and emits white light. The resistance of filament changes considerably when switched on. Procedure: 1. Connect the circuit as shown in the circuit diagram. 2. Switch on the D.C supply. 3. Vary the rheostat to obtain different voltage and current values. Note the voltage and corresponding current values. Calculate the resistance of lamp. 4. Plot the V-f characteristics of incandescent lamp.

P r o m o s m 😄

Code: pset_time=15 sleep_time=8 print(sleep_time > pset_time) derive=True drink=False both= drink and derive print(both) Output: False False

basic m=int(input());n=int(input());p=lambda x:True if x>1 and all(x%i!=0 for i in range(2,x)) else False;print([i for i in range(m,n+1) if p(i)]) opmtimized import math;m=int(input());n=int(input());p=lambda x:True if x>1 and all(x%i!=0 for i in range(2,int(math.sqrt(x))+1)) else False;print([i for i in range(m,n+1) if p(i)])

damn you stretched this one out lol

But isnt your code extremely slow? First, you dont need to iterate j up to i, only up to sqrt(i), because number can't have a divisor bigger than its sqrt. Second, iterating over every number in range is ineffective, you should look up Eratosthene's algirithm to generate primes

🤦 "Promo sm"

Code: count=0 while(count<3): print("inside while",count) count=count+1 else: print("inside else”)

Code: x=int(input("enter mil cloth amount")) y=int(input("enter I hand loom items amount")) z=x+y if(1<=z<=100): d1=0 d2=y*(5/100) elif (100< z <= 200): d1 = x*(5/100) d2 = y*(7.5 / 100) elif (200< z <= 300): d1 = x*(7.5/100) d2 = y*(10 / 100) elif (300< z): d1 = x*(7.5/100) d2 = y*(15/100) discount=d1+d2 print("total discount is:",discount) print("total amount is:”,z-discount)

Code: x=int(input("enter your salary")) if(x<=22000): y=0 elif(22000<x<=30000): y=20/100*(x) elif(30000<x<=50000): y=25/100*(x)+1600 elif(50000<x<=75000): y=40/100*(x)+6600 elif(75000<x): y=50/100*(x)+16600 print("net salary is:”,(x-y))

Code: phy=int(input("marks in physics")) chem=int(input("marks in chemistry")) maths=int(input("marks in maths")) bio=int(input("marks in bio”)) if(phy>=90): print("Grade in physics X") elif(90>phy>=80): print("Grade in physics A") elif(80>phy >=70): print("Grade in physics B") elif (70 > phy >= 60): print("Grade in physics C") elif(60>phy>=50): print("Grade in physics D") elif(50>phy>=35): print("Grade in physics P") else: print("Grade in physics F") if(chem>=90): print("Grade in chemistry X") elif(90>chem>=80): print("Grade in chemistry A") elif(80>chem >=70): print("Grade in chemistry B") elif (70 > chem >= 60): print("Grade in chemistry C") elif(60>chem>=50): print("Grade in chemistry D") elif(50>chem>=35): print("Grade in chemistry P") else: print("Grade in chemistry F") if(maths>=90): print("Grade in maths X") elif(90>maths>=80): print("Grade in maths A") elif(80>maths >=70): print("Grade in maths B") elif (70 > maths >= 60): print("Grade in maths C") elif(60>maths>=50): print("Grade in maths D") elif(50>maths>=35): print("Grade in maths P") else: print("Grade in maths F") if(bio>=90): print("Grade in bio X") elif(90>bio>=80): print("Grade in bio A") elif(80>bio >=70): print("Grade in bio B") elif (70 > bio >= 60): print("Grade in bio C") elif(60>bio>=50): print("Grade in bio D") elif(50>bio>=35): print("Grade in bio P") else: print("Grade in bio F”)

lol i thought this was gonna be a meme but its serious beginner code help. nice

Implement would mean to create your own integers and define your own addition/subtraction/etc. on them, but since these would all eventually just rely on the already existing addition/subtraction/etc. operators, you should make it a little more challenging by e.g. implementing these operations on a custom class for ℚ or ℂ.

Code: x=int(input("enter first number")) y=int(input("enter second number")) if(x==y): print("both numbers are equal") elif(x!=y): print("both numbers are not equal") if(x>y): print("first number is greater than second number") elif(x<y): print("second number is greater than first number”)

Code: x=int(input("enter a number")) if(x>0): print("number is positive") elif(x==0): print("number is zero") else: print("number is negative")

Code: a=int(input("enter a number")) b=int(input("enter another number")) c=int(input("enter another number")) if(a>b and a>c): print("a is the greatest") elif(b>c and b>a): print("b is the greatest") else: print("c is the greatest”)